Webfmw60n190s2hf ipw60r180p7 ipw60r180c7 - fmw79n60s1fdhf - - ipw60r040cfd7 fmw79n60s1hf ipw60r037p7 ipw60r040c7 - fuji semiconductor 600 v coolmos™ p7 600 v … WebFMW60N190S2HF FMW2.41.1/I Worldway Electronics, World's largest source of shortage and hard to find parts Franchised Distributor Resource. Information About Us Delivery Information Payment Information Quick Links Request for Quotation Product Catalog Manufacturer Support Help Center

Fuji Electric Corp. of America Power MOSFET Data Sheets

WebSpec. No. : C745H8 Issued Date : 2024.02.17 Revised Date : Page No. 1/ 11 Dual N-Channel Enhancement Mode Power MOSFET Features. Low On Resistance Simple Drive Requirement Low Gate Charge Fast Switching Characteristic Pb-free lead plating and Halogen-free package WebMaximum Power Dissipation (Pd): 113 W Maximum Drain-Source Voltage Vds : 60 V Maximum Gate-Source Voltage Vgs : 20 V Maximum Gate-Threshold Voltage Vgs (th) : 3.5 V Maximum Drain Current Id : 50 A Maximum Junction Temperature (Tj): 150 °C Maximum Drain-Source On-State Resistance (Rds): 0.028 Ohm Package: TO-220 how many teenagers struggle with identity

Fuji Electric Corp. of America Power MOSFET Data Sheets

WebMaximum Drain-Source Voltage Vds : 100 V Maximum Gate-Source Voltage Vgs : 20 V Maximum Gate-Threshold Voltage Vgs (th) : 3.5 V Maximum Drain Current Id : 64 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 88 nC Rise Time (tr): 47 nS Drain-Source Capacitance (Cd): 1100 pF WebFuji Electric Corp. of America Power MOSFETs Super J MOS S2 Model: FMP60N088S2HF WebFMW60N190S2HF MOSFET. Datasheet pdf. Equivalent. Type Designator: FMW60N190S2HF Type of Transistor: MOSFET Type of Control Channel: N -Channel. … how many teenagers suffer from mental health